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| FDMC4435BZ P-Channel Power Trench(R) MOSFET February 2008 FDMC4435BZ P-Channel Power Trench MOSFET -30V, -18A, 20.0m Features Max rDS(on) = 20.0m at VGS = -10V, ID = -8.5A Max rDS(on) = 37.0m at VGS = -4.5V, ID = -6.3A Extended VGSS range (-25V) for battery applications High performance trench technology for extremely low rDS(on) High power and current handling capability HBM ESD protection level >7kV typical (Note 4) 100% UIL Tested Termination is Lead-free and RoHS Compliant (R) tm General Description This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications High side in DC - DC Buck Converters Notebook battery power management Load switch in Notebook Bottom Top Pin 1 S S D S G D D D D D D D 6 7 8 3 2 1 S S S 5 4 G Power 33 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings -30 25 -18 -31 -8.5 -50 24 31 2.3 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 4 53 C/W Package Marking and Ordering Information Device Marking FDMC4435BZ Device FDMC4435BZ Package Power 33 1 Reel Size 13'' Tape Width 12mm Quantity 3000 units (c)2008 Fairchild Semiconductor Corporation FDMC4435BZ Rev.C www.fairchildsemi.com FDMC4435BZ P-Channel Power Trench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -24V, VGS = 0V, TJ = 125C VGS = 25V, VDS = 0V -30 22 -1 -100 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -8.5A VGS = -4.5V, ID = -6.3A VGS = -10V, ID = -8.5A, TJ = 125C VDD = -5V, ID = -8.5A -1.0 -1.9 -5.3 14.6 23.1 20.7 24 20.0 37.0 28.0 S m -3.0 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz 1540 295 260 5.1 2045 395 385 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to -10V VGS = 0V to -4.5V VDD = -15V, ID = -8.5A VDD = -15V, ID = -8.5A, VGS = -10V, RGEN = 6 10 6 34 20 33 17 5 9 20 12 55 36 46 24 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -8.5A VGS = 0V, IS = -1.9A IF = -8.5A, di/dt = 100A/s (Note 2) (Note 2) 0.92 0.75 22 11 1.5 1.2 V ns nC NOTES: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. . a. 53C/W when mounted on a 1 in2 pad of 2 oz copper b. 125C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. Starting TJ = 25C, L = 1mH, IAS = -7A, VDD = -27V, VGS = -10V. 4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMC4435BZ Rev.C 2 www.fairchildsemi.com FDMC4435BZ P-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V -ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VGS = -10V VGS = -4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -3.5V VGS = -4V 40 30 VGS = -5V VGS = -10V VGS = - 4V 20 10 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -3.5V VGS = -5V 0 0 1 2 3 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 10 20 30 40 50 -ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 60 SOURCE ON-RESISTANCE (m) 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -75 ID = -8.5A VGS = -10V 50 40 30 20 TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX ID = -8.5A rDS(on), DRAIN TO TJ = 125oC 10 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 50 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX Figure 4. On-Resistance vs Gate to Source Voltage 50 -IS, REVERSE DRAIN CURRENT (A) 10 VGS = 0V -ID, DRAIN CURRENT (A) 40 VDS = -5V TJ = 150oC 30 20 TJ = 150oC 1 TJ = 25oC 0.1 10 0 1 2 0.01 TJ = 25oC TJ = -55oC TJ = -55oC 3 4 5 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC4435BZ Rev.C 3 www.fairchildsemi.com FDMC4435BZ P-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -8.5A 10000 Ciss CAPACITANCE (pF) VDD = -15V 8 6 VDD = -10V VDD = -20V 1000 Coss 4 2 0 0 10 20 Qg, GATE CHARGE(nC) 100 f = 1MHz VGS = 0V Crss 30 40 10 0.1 1 10 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 40 -ID, DRAIN CURRENT (A) 20 -IAS, AVALANCHE CURRENT(A) 10 30 TJ = 25oC 20 VGS = -10V VGS = -4.5V Limited by Package RJC = 4 C/W o TJ = 125oC 10 1 0.001 0.01 0.1 1 10 100 0 25 50 75 100 o 125 150 tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 100 -Ig, GATE LEAKAGE CURRENT(A) Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 -4 VDS = 0V -ID, DRAIN CURRENT (A) 10 100us 1ms 10 -5 TJ = 125oC 1 THIS AREA IS LIMITED BY rDS(on) 10ms 100ms 1s 10s DC 10 -6 0.1 SINGLE PULSE TJ = MAX RATED RJA = 125 C/W TA = 25oC o 10 -7 TJ = 25oC 0.01 0.01 0.1 1 10 100 10 -8 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) -VGS, GATE TO SOURCE VOLTAGE(V) Figure 11. Forward Bias Safe Operating Area Figure 12. Igss vs Vgss FDMC4435BZ Rev.C 4 www.fairchildsemi.com FDMC4435BZ P-Channel Power Trench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 P(PK), PEAK TRANSIENT POWER (W) VGS = -10V 10 SINGLE PULSE RJA = 125 C/W TA = 25 C o o 1 0.5 -3 10 -2 -1 10 10 1 t, PULSE WIDTH (sec) 10 100 1000 Figure 13. Single Pulse Maximum Power Dissipation 2 DUTY CYCLE-DESCENDING ORDER 1 NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE RJA = 125 C/W o 0.01 -3 10 10 -2 10 -1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve FDMC4435BZ Rev.C 5 www.fairchildsemi.com FDMC4435BZ P-Channel Power Trench(R) MOSFET Dimensional Outline and Pad Layout FDMC4435BZ Rev.C 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world, 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Obsolete Full Production Not In Production (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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